Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1098
Degradation and Breakdown of W–La2O3 Stack after Annealing in N2
JOEL MOLINA REYES
ALFONSO TORRES JACOME
WILFRIDO CALLEJA ARRIAGA
Acceso Abierto
Atribución-NoComercial-SinDerivadas
PMA
SILC
Breakdown
Reliability
We report the effect of relatively high-voltage stressing (under substrate injection) on the stress-induced leakage current (SILC) and breakdown of W–La2O3 stacked structures. It is shown that the gate area of the metal–insulator–semiconductor (MIS) devices under evaluation influences their final degradation characteristics after stress. Once the samples reach breakdown, their post-breakdown current–voltage (I–V) characteristics suggest that leakage spots are highly localized and are caused by the accumulation of defects.
The Japan Society of Applied Physics
2008
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Molina-Reyes, J. , et al., (2008). Degradation and Breakdown of W–La2O3 Stack after Annealing in N2, Japanese Journal of Applied Physics, Vol. 47 (9): 7076–7080
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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