Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1101
Thermo-sensing silicon–germanium–boron films prepared by plasma for un-cooled micro-bolometers
ALFONSO TORRES JACOME
MARIO MORENO MORENO
ANDREY KOSAREV
AURELIO HORACIO HEREDIA JIMENEZ
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Amorphous semiconductors
Germanium
Silicon
Conductivity
Plasma deposition
In this work we report a study of silicon–germanium–boron alloys (a-SixGeyBz:H) deposited by low frequency plasma enhanced chemical vapor deposition (LF PECVD) at relatively low temperatures, which are compatible with the IC silicon technology for applications as low resistance thermo-sensing films in micro-bolometers. Three values of germanium gas content (Gey) were used during the film deposition, Gey = 0.3, 0.45 and 0.55. Deposition and film properties were compared with a reference intrinsic film (a-SixGey:H) in order to study the Gey effect on the temperature dependence of conductivity (δ(T)) and specifically on the activation energy (Ea). We observed a variation on the activation energy from Ea = 0.34 eV to Ea = 0.18 eV and on the room temperature conductivity from δ RT = 6 X 10-5 (Ω cm)-1 to δ RT = 2.5 X 10-2 (Ω cm)-1, for the reference intrinsic film and for the boron alloy with Gey = 0.55, respectively. The solid phase composition of the films was characterized by SIMS measurements. The effect of patterning the films (µ m scale) with photolithography and the deposition on a SiNx micro-bridge on the film electrical properties was also studied.
Elsevier B.V.
2008
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Torres-Jacome, A., et al., (2008). Thermo-sensing silicon–germanium–boron films prepared by plasma for un-cooled micro-bolometers, Journal of Non-Crystalline Solids (354): 2556–2560
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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