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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1101| Thermo-sensing silicon–germanium–boron films prepared by plasma for un-cooled micro-bolometers | |
| ALFONSO TORRES JACOME MARIO MORENO MORENO ANDREY KOSAREV AURELIO HORACIO HEREDIA JIMENEZ | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Amorphous semiconductors Germanium Silicon Conductivity Plasma deposition | |
| In this work we report a study of silicon–germanium–boron alloys (a-SixGeyBz:H) deposited by low frequency plasma enhanced chemical vapor deposition (LF PECVD) at relatively low temperatures, which are compatible with the IC silicon technology for applications as low resistance thermo-sensing films in micro-bolometers. Three values of germanium gas content (Gey) were used during the film deposition, Gey = 0.3, 0.45 and 0.55. Deposition and film properties were compared with a reference intrinsic film (a-SixGey:H) in order to study the Gey effect on the temperature dependence of conductivity (δ(T)) and specifically on the activation energy (Ea). We observed a variation on the activation energy from Ea = 0.34 eV to Ea = 0.18 eV and on the room temperature conductivity from δ RT = 6 X 10-5 (Ω cm)-1 to δ RT = 2.5 X 10-2 (Ω cm)-1, for the reference intrinsic film and for the boron alloy with Gey = 0.55, respectively. The solid phase composition of the films was characterized by SIMS measurements. The effect of patterning the films (µ m scale) with photolithography and the deposition on a SiNx micro-bridge on the film electrical properties was also studied. | |
| Elsevier B.V. | |
| 2008 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Torres-Jacome, A., et al., (2008). Thermo-sensing silicon–germanium–boron films prepared by plasma for un-cooled micro-bolometers, Journal of Non-Crystalline Solids (354): 2556–2560 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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