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Fabrication and characterization of coplanar waveguides on silicon using a combination of SiO2 and SRO20 | |
REBECA LEAL ROMERO IGNACIO ENRIQUE ZALDIVAR HUERTA MARIA DEL CARMEN MAYA SANCHEZ MARIANO ACEVES MIJARES J. APOLINAR REYNOSO HERNANDEZ | |
Acceso Abierto | |
Atribución-NoComercial-SinDerivadas | |
Attenuation constant Coplanar waveguide (CPW) Dielectric constant Silicon rich oxide (SRO) Traveling wave | |
In this work, the use of silicon rich oxide (SRO) and chemical vapor deposition SiO2 double layers as passivation films of coplanar waveguides (CPW) on high resistivity silicon (HR-Si) with an N+ backside is studied. The microwave performance of the fabricated CPWs is evaluated by computing the attenuation loss of the devices in the 0.045–50 GHz frequency range. Experimental results show that the N+ layer can be used without affecting CPW performance. Also, using a combined dielectric layer (SRO20/SiO2), the attenuation losses are reduced compared to single dielectric layers. | |
IEEE | |
2008 | |
Artículo | |
Inglés | |
Estudiantes Investigadores Público en general | |
Leal-Romero, R., et al., (2008). Fabrication and characterization of coplanar waveguides on silicon using a combination of SiO2 and SRO20, IEEE Transactions on components and packaging technologies, Vol. 31 (3): 678-682 | |
ELECTRÓNICA | |
Versión aceptada | |
acceptedVersion - Versión aceptada | |
Aparece en las colecciones: | Artículos de Electrónica |
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37_FabricationandCharacterizationofCoplanar.pdf | 1.1 MB | Adobe PDF | Visualizar/Abrir |