Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1111
Fabrication and characterization of coplanar waveguides on silicon using a combination of SiO2 and SRO20
REBECA LEAL ROMERO
IGNACIO ENRIQUE ZALDIVAR HUERTA
MARIA DEL CARMEN MAYA SANCHEZ
MARIANO ACEVES MIJARES
J. APOLINAR REYNOSO HERNANDEZ
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Attenuation constant
Coplanar waveguide (CPW)
Dielectric constant
Silicon rich oxide (SRO)
Traveling wave
In this work, the use of silicon rich oxide (SRO) and chemical vapor deposition SiO2 double layers as passivation films of coplanar waveguides (CPW) on high resistivity silicon (HR-Si) with an N+ backside is studied. The microwave performance of the fabricated CPWs is evaluated by computing the attenuation loss of the devices in the 0.045–50 GHz frequency range. Experimental results show that the N+ layer can be used without affecting CPW performance. Also, using a combined dielectric layer (SRO20/SiO2), the attenuation losses are reduced compared to single dielectric layers.
IEEE
2008
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Leal-Romero, R., et al., (2008). Fabrication and characterization of coplanar waveguides on silicon using a combination of SiO2 and SRO20, IEEE Transactions on components and packaging technologies, Vol. 31 (3): 678-682
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

Upload archives