Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1225
FTIR and photoluminescence of annealed silicon rich oxide films
MARIANO ACEVES MIJARES
ALFREDO MORALES SANCHEZ
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Silicon Rich Oxide (SRO)
Silicon nanoparticles
Refractive index
Photoluminescence
FTIR
In order to have optoelectronic function integrated in a single chip, it is very important to obtain a silicon compatible material with an optimal Photoluminescence (PL) response. The Silicon Rich Oxide (SRO) has shown intense PL and is also compatible with silicon technology. In this work, the composition and optical properties of the SRO films are studied using null Ellipsometry, Fourier Transformed Infrared spectroscopy (FTIR), and Photoluminescence (PL). The SRO films were annealed at high temperature during different times. The IR absorption spectra show the presence of three characteristics Si-O-Si vibrations modes in SiO2. However, changes in their intensity and position were observed when annealing time and silicon excess were varied. These changes are directly related with structural variation in the SRO films. PL spectra show a considerable emission in the range 650 to 850 nm that varies with different thermal treatment times.
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales
2009
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Luna-López, J.A., et al., (2009). FTIR and photoluminescence of annealed silicon rich oxide films, Superficies y Vacío 22(1): 11-14
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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