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Performance improvement of low-temperature a-SiGe:H thin-film transistors | |
Miguel Dominguez Pedro Rosales Quintero ALFONSO TORRES JACOME | |
Acceso Abierto | |
Atribución-NoComercial-SinDerivadas | |
Thin-film transistor Hydrogenated amorphous silicon–germanium Hydrogen plasma Low-temperature | |
This paper presents the study of an interface preparation procedure in the source/drain regions of the active layer, prior to deposit the n+ a-Ge:H contact layer in the fabrication process of low-temperature a-SiGe:H thin-film transistors. The devices were fabricated on corning 1737 substrates at 200 °C. The improvement in metal–semiconductor interface by the interface preparation procedure was demonstrated. This interface improvement translates in higher mobility and better values of off-current, on/off-current ratio, subthreshold slope and threshold voltage. | |
Solid-State Electronics | |
2012 | |
Artículo | |
Inglés | |
Estudiantes Investigadores Público en general | |
Dominguez, Miguel, et al., (2012), Performance improvement of low-temperature a-SiGe:H thin-film transistors, Solid-State Electronics, Vol. 76:44–47 | |
ELECTRÓNICA | |
Versión aceptada | |
acceptedVersion - Versión aceptada | |
Appears in Collections: | Artículos de Electrónica |
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