Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2104
Performance improvement of low-temperature a-SiGe:H thin-film transistors
Miguel Dominguez
Pedro Rosales Quintero
ALFONSO TORRES JACOME
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Thin-film transistor
Hydrogenated amorphous silicon–germanium
Hydrogen plasma
Low-temperature
This paper presents the study of an interface preparation procedure in the source/drain regions of the active layer, prior to deposit the n+ a-Ge:H contact layer in the fabrication process of low-temperature a-SiGe:H thin-film transistors. The devices were fabricated on corning 1737 substrates at 200 °C. The improvement in metal–semiconductor interface by the interface preparation procedure was demonstrated. This interface improvement translates in higher mobility and better values of off-current, on/off-current ratio, subthreshold slope and threshold voltage.
Solid-State Electronics
2012
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Dominguez, Miguel, et al., (2012), Performance improvement of low-temperature a-SiGe:H thin-film transistors, Solid-State Electronics, Vol. 76:44–47
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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