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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2288| Modeling the Al/Si rich oxide (SRO)/Si structure | |
| MARIANO ACEVES MIJARES | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Nitrous oxide PN junction N-type silicon | |
| Al/SRO/Si devices produced on N-type silicon are experimentally characterized to understand their behavior. Different values were used for the nitrous oxide/silane gas flow ratio (Ro) to control the excess silicon. Depending on the silicon excess, the devices could be operated in various modes; from surface accumulation to deep depletion or to a reverse biased PN junction. Modeling of the different devices is presented. © 2002 American Vacuum Society. @DOI: 10.1116/1.1498277# | |
| Journal of Vacuum Science & Technology B | |
| 10-06-2002 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Aceves, M, et al., (2002), Modeling the Al/Si rich oxide (SRO)/Si structure, Journal of Vacuum Science & Technology B, Vol. 20(5):1-8 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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