Por favor, use este identificador para citar o enlazar este ítem: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2299
Identifying the Diffusion and Drift Conduction Regions in MOSFETs Through S-Parameters
Emmanuel Torres Ríos
Reydezel Torres Torres
Edmundo Antonio Gutiérrez Domínguez
Acceso Abierto
Atribución-NoComercial-SinDerivadas
RF-MOSFET
S-parameters
Subthreshold
A method for characterizing low-voltage-operating MOSFETs through small-signal S-parameters is introduced. The method allows extracting the drain-to-source channel resistance at zero drain-to-source voltage, which is not feasible with dc conventional methods. Furthermore, this zero drain-to-source voltage RF method identifies the gate voltage where the diffusion and drift conduction mechanisms overlap. This is really helpful in defining the appropriate subthreshold drain current model and its corresponding impact at RF operating conditions. The proposed experimental RF method is validated and compared with a dc-based method for an 80-nm-channel-length nMOSFET.
IEEE Transactions on electron devices
2013-03
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Torres-Rios, Emmanuel, et al., (2013), Identifying the Diffusion and Drift Conduction Regions in MOSFETs Through S-Parameters, IEEE Transactions on electron devices, Vol. 60(3): 1288 – 1291
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Aparece en las colecciones: Artículos de Electrónica

Cargar archivos: