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Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-Parameters | |
Fabián Zárate Rincón GERMAN ANDRES ALVAREZ BOTERO Reydezel Torres Torres Roberto Stack Murphy Arteaga | |
Acceso Abierto | |
Atribución-NoComercial-SinDerivadas | |
DC methods Physical parameters of MOSFET RF-MOSFET Two-port S-parameter measurements. | |
Using a new test fixture that allows us to bias the bulk terminal through an additional compensated DC probe, atwo-port S-measurement-based methodology to characterize RF-MOSFETs in common-source configuration is herein presented. In addition to obtaining S-parameters at different bulk-to-source voltages using a single two-port configured test-fixture, the proposal allows the analysis of the electrical parameters of a MOSFET that are influenced by the substrate effect when the frequency rises. Physically expected results are obtained for device’s model parameters, allowing to accurately reproduce S-parameters up to 20 GHz. Furthermore, extracted parameters, such as threshold voltage, are in agreement with those obtained using well-established DC methods. This method allows one to characterize a four-terminal MOSFET from two-port small-signal measurements. | |
IEEE Transactions on Electron Devices | |
2013-08 | |
Artículo | |
Inglés | |
Estudiantes Investigadores Público en general | |
Zárate-Rincón, Fabián, et al., (2013), Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-Parameters, IEEE Transactions on Electron Devices, Vol. 60(8):2450-2456 | |
ELECTRÓNICA | |
Versión aceptada | |
acceptedVersion - Versión aceptada | |
Aparece en las colecciones: | Artículos de Electrónica |
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187. Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages from S-Parameters.pdf | 1.5 MB | Adobe PDF | Visualizar/Abrir |